PBSS301NX,115

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PBSS301NX,115 datasheet

• Маркировка
  PBSS301NX,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS301NX,115 Collector- Emitter Voltage Vceo Max: 12 V Configuration: Single Dual Collector Current - Collector (ic) (max): 5.3A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 140MHz ID_COMPONENTS: 1949845 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 5.3 A Maximum Operating Frequency: 140 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 2.1W Power Dissipation: 2100 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 200mV @ 265mA, 5.3A Voltage - Collector Emitter Breakdown (max): 12V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 12 V Collector- Emitter Voltage VCEO Max: 12 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 5.3 A Gain Bandwidth Product fT: 140 MHz DC Collector/Base Gain hfe Min: 300 at 0.5 A at 2 V, 300 at 1 A at 2 V, 250 at 2 A at 2 V, 200 at 4 A at 2 V, 200 at 6 A at 2 V DC Current Gain hFE Max: 300 at 0.5 A at 2 V Maximum Power Dissipation: 2100 mW Factory Pack Quantity: 1000 Part # Aliases: PBSS301NX T/R Other Names: 934059007115, PBSS301NX T/R
• Количество страниц
  15 шт.
• Форматы файла
  HTML, PDF

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